ipb070n06l g ipp070n06l g opti mos ? power-transistor features ? for fast switching converters and sync. rectification ? n-channel enhancement - logic level ? 175 c operating temperature ? avalanche rated ? pb-free lead plating, rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 1) 80 a t c =100 c 80 pulsed drain current i d,pulse t c =25 c 2) 320 avalanche energy, single pulse e as i d =80 a, r gs =25 ? 450 mj reverse diode d v /d t d v /d t i d =80 a, v ds =48 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25 c 214 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value 2) see figure 3 1) current is limited by bondwire; with an r thjc =0.7 k/w the chip is able to carry 114 a. v ds 60 v r ds(on),max smd version 7 m ? i d 80 a product summary type package marking ipb070n06l g pg-to263-3 070n06l ipp070n06l g pg-to220-3 070n06l type ipb070n06l g ipp070n06l g package pg-to263-3 pg-to220-3 marking 070n06l 070n06l rev. 1.22 page 1 2006-04-07
ipb070n06l g ipp070n06l g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.7 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =150 a 1.2 1.6 2 zero gate voltage drain current i dss v ds =60 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =60 v, v gs =0 v, t j =125 c - 1 100 gate-source leakage current i gss v gs =20 v, v ds =60 v - 10 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =80 a - 5.8 7 m ? v gs =4.5 v, i d =53 a - 7.1 10 v gs =10 v, i d =80 a, smd version 5.5 6.7 v gs =4.5 v, i d =53 a, smd version 6.8 9.7 gate resistance r g - 1.9 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =80 a 60 121 - s 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values rev. 1.22 page 2 2006-04-07
ipb070n06l g ipp070n06l g parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 3200 4300 pf output capacitance c oss - 750 1000 reverse transfer capacitance c rss - 180 270 turn-on delay time t d(on) -1827ns rise time t r -3552 turn-off delay time t d(off) -2842 fall time t f -3147 gate char g e characteristics 4) gate to source charge q gs -1215nc gate charge at threshold q g(th) -57 gate to drain charge q gd -3146 switching charge q sw -3755 gate charge total q g - 95 126 gate plateau voltage v plateau - 3.6 - v output charge q oss v dd =30 v, v gs =0 v -2939 reverse diode diode continous forward current i s - - 80 a diode pulse current i s,pulse - - 320 diode forward voltage v sd v gs =0 v, i f =80 a, t j =25 c - 0.91 1.3 v reverse recovery time t rr -5975ns reverse recovery charge q rr - 80 100 nc 4) see figure 16 for gate charge parameter definition v r =30 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =30 v, f =1 mhz v dd =30 v, v gs =10 v, i d =80 a, r g =2 ? v dd =30 v, i d =80 a, v gs =0 to 10 v rev. 1.22 page 3 2006-04-07
ipb070n06l g ipp070n06l g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 50 100 150 200 250 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 40 50 60 70 80 90 0 50 100 150 200 t c [c] i d [a] rev. 1.22 page 4 2006-04-07
ipb070n06l g ipp070n06l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3.5 v 4 v 4.5 v 5 v 5.5 v 10 v 0 0 5 10 15 0 40 80 120 160 200 i d [a] r ds(on) [m ? ] 25 c 175 c 0 40 80 120 160 012345 v gs [v] i d [a] 0 40 80 120 160 0 20406080 i d [a] g fs [s] 3.5 v 4 v 4.5 v 5v 5.5 v 10 v 0 40 80 120 160 200 240 0123 v ds [v] i d [a] rev. 1.22 page 5 2006-04-07
ipb070n06l g ipp070n06l g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =80 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 5 10 15 20 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 150 a 1500 a 0 0.5 1 1.5 2 2.5 3 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 0 1020304050 v ds [v] c [pf] 25 c 175 c 25c 98% 175c 98% 10 3 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 1.22 page 6 2006-04-07
ipb070n06l g ipp070n06l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =80 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 12v 30 v 48 v 0 2 4 6 8 10 12 0 20 40 60 80 100 120 q gate [nc] v gs [v] 50 55 60 65 70 75 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t av [s] i av [a] rev. 1.22 page 7 2006-04-07
ipb070n06l g ipp070n06l g pg-to-263 (d2-pak) rev. 1.22 page 8 2006-04-07
ipb070n06l g ipp070n06l g pg-to220-3: outline rev. 1.22 page 9 2006-04-07
ipb070n06l g ipp070n06l g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties of non-infringement of intellectual property rights of any third p arty. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies offi ce. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 1.22 page 10 2006-04-07
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